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High Sensitivity MEMSIC MHA100KN Hall Effect Sensor Offering Wide Operating Voltage and Compact Size

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High Sensitivity MEMSIC MHA100KN Hall Effect Sensor Offering Wide Operating Voltage and Compact Size

Voltage - Supply : 1.65V~5.5V

Description : XDFN-4-EP Switches (Solid State) RoHS

Mfr. Part # : MHA100KN

Model Number : MHA100KN

Package : XDFN-4-EP

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Product Overview

The MEMSIC MHA100KN is a high-performance, low-power Hall-Effect sensor designed for various applications. Utilizing a low-power CMOS process, it offers a wide operation voltage range and ultra-low power consumption (<5uA@1.8V). The sensor features good RF noise immunity and omnipolar operation, providing dual outputs for N and S pole detection. It is RoHS compliant and comes in a compact DFN4 package.

Product Attributes

Brand: MEMSIC
Product Name: MHA100KN
Package Type: DFN4
Certifications: RoHS compliant

Technical Specifications

Parameter	Conditions	Min	Typ	Max	Units
Supply Voltage (VDD)		1.65	1.8	5.5	V
Supply Current			2.5	5.0	A
Supply Current	-40~85 C		2.5	10.0	A
Power Down Current			1.0		nA
Operating Temperature		-40		85	C
Storage Temperature		-55		125	C
Awake Time (Tawake)		50	100		s
Period (Tperiod)		50	100		ms
Duty Cycle			0.05		%
Output High (VOH)	IOUT=+0.5mA	VDD-0.3		VDD+0.1	V
Output Low (VOL)	IOUT=-0.5mA	-0.3		0.1	V
Output Current		-0.5		0.5	mA
Magnetic Opening Point (BOP)		27	37	47	Gauss
Magnetic Releasing Point (BRP)		20	30	40	Gauss
Hysteresis Window (BHYS)		2	7		Gauss

2411111211_MEMSIC-MHA100KN_C3716210.pdf

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