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Open Loop Current Transducer LEM HAH1BVW S06 Featuring Hall Effect Technology for Battery Management

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Open Loop Current Transducer LEM HAH1BVW S06 Featuring Hall Effect Technology for Battery Management

Description : Current Sensors RoHS

Mfr. Part # : HAH1BVW S/06

Model Number : HAH1BVW S/06

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Product Overview

The HAH1BVW family of open-loop current transducers utilizes Hall effect technology for the electronic measurement of DC, AC, or pulsed currents in high-power, low-voltage automotive applications. They provide galvanic separation between the primary and secondary circuits, offering excellent accuracy, linearity, and low thermal drift. The ratiometric nature of these transducers allows for flexible current measuring ranges within the same housing, making them ideal for battery management systems.

Product Attributes

Brand: LEM
Technology: Open Loop, Hall Effect
Housing Material: PBT GF30
Core Material: FeSi wound core
IP Level: IPx2
Certifications: Automotive

Technical Specifications

Parameter	Symbol	Unit	Specification	Conditions
Absolute Ratings (Not Operating)
Maximum supply voltage	UC max	V	14
Maximum reverse supply voltage	UC max	V	-14
Maximum output voltage	Vout max	V	-14 to 14
Maximum output current	Iout max	mA	-10 to 10
Ambient storage temperature	TS	C	-40 to 125
Electrostatic discharge voltage (HBM)	UESD	kV	8
Maximum admissible vibration (random RMS)	max	ms	96.6	10 to 2000 Hz, -40 C to 125 C
RMS voltage for AC insulation test	Ud	kV	2.5	50 Hz, 1 min
Creepage distance	dCp	mm	4.85
Clearance	dCI	mm	4.85
Comparative tracking index	CTI		PLC3
Operating Characteristics in Nominal Range (IP N)
Primary current, measuring range	IP M	A	-600 to 600
Primary nominal RMS current	IP N	A	-600 to 600
Supply voltage	UC	V	4.5 to 5.5
Ambient operating temperature	TA	C	-40 to 125
Output voltage	Vout	V	(UC/5) (Vo + G IP )
Sensitivity	G	mV/A	3.333	@ TA = 25 C
Offset voltage	VO	V	2.5
Output resolution	mV	2.5
Output clamping high voltage	VS Z	V	4.74	@ UC = 5 V
Output clamping low voltage	VS Z	V	0.26	@ UC = 5 V
Current consumption	IC	mA	7 (typical)	@ TA = 25 C, @ UC = 5 V
Load resistance	RL	k	10
Output internal resistance	Rout		1	@ TA = 25 C
Performance Data
Ratiometricity error	r	%	0.2
Sensitivity error	G	%	1	@ TA = 25 C, @ UC = 5 V
Electrical offset voltage	VO E	mV	2.5	@ TA = 25 C, @ UC = 5 V
Magnetic offset voltage	VO M	mV	2	@ UC = 5 V, @ TA = 25 C
Linearity error	L	%	-1 to 1	% of full scale
Average temperature coefficient of VO E	TCVO E AV	mV/C	0.06
Average temperature coefficient of G	TCG AV	%/C	0.02
Step response time @ 90 %	tr	ms	10
Frequency bandwidth	BW	Hz	70	@ -3 dB
Peak-to-peak noise voltage	Vno pp	mV	10	DC to 1 MHz
Output RMS noise voltage	Vno	mV	1.6
Start-up time	tstart	ms	1
Setting time after overload	ts	ms	10

2410311332_LEM-HAH1BVW-S-06_C454763.pdf

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