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photointerrupter SHARP GP1S396HCPSF designed for printers camera lens control and mechanical position sensing

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photointerrupter SHARP GP1S396HCPSF designed for printers camera lens control and mechanical position sensing

Operating Temperature : -25℃~+85℃

Width : 1.4mm

Slot Width : 1.2mm

Height : 1.6mm

Slit Width : 0.12mm

Length : 2.26mm

Voltage - Forward(Vf) : 1.2V

Rise Time : 30us

Output Current : 20mA

Fall Time : 30us

Description : 1.2mm 1.2V SMD Photointerrupters - Slot Type - Transistor Output RoHS

Mfr. Part # : GP1S396HCPSF

Model Number : GP1S396HCPSF

Package : SMD

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Product Overview

The SHARP GP1S396HCPSF is a compact and low-profile transmissive photointerrupter featuring a phototransistor output. Engineered with industry-leading thin molding technology, it offers superior detection accuracy due to its narrow infrared beam slit width of 0.12mm. This device is designed for general-purpose detection of object presence or motion, making it suitable for applications such as printers, camera lens control, and various mechanical position detections. Its compact size and high precision make it an ideal solution for space-constrained designs requiring reliable object detection.

Product Attributes

Brand: SHARP
Model: GP1S396HCPSF
Origin: China
Certifications: RoHS directive compliant (2002/95/EC)
Material: Black PPA resin (Case), 42 Alloy (Lead frame), Au-Pd-Ni-Cu (Lead frame plating)
ODS Materials Compliance: Does not contain CFCS, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane.
Halogen Material Compliance: Chlorine < 900ppm, Bromine < 900ppm, Chlorine + Bromine < 1500ppm (Homogeneous material).
Chinese RoHS Compliance: Compliant with Management Methods for Control of Pollution Caused by Electronic Information Products Regulation.

Technical Specifications

Feature	Specification	Unit
Type	Transmissive Photointerrupter with Phototransistor Output
Gap Width	1.2	mm
Slit Width (detector side)	0.12	mm
Package Dimensions	2.26 1.4 1.6	mm
Product Mass	Approx. 5	mg
Input Forward Current (Max)	30	mA
Input Reverse Voltage (Max)	6	V
Input Power Dissipation (Max)	50	mW
Output Collector-Emitter Voltage (Max)	35	V
Output Emitter-Collector Voltage (Max)	6	V
Output Collector Current (Max)	20	mA
Output Collector Power Dissipation (Max)	50	mW
Total Power Dissipation (Max)	70	mW
Operating Temperature	-25 to +85	C
Storage Temperature	-40 to +100	C
Soldering Temperature (Max)	300	C
Soldering Time (Max)	3	s
Input Forward Voltage (Typ.)	1.2	V (IF=20mA)
Input Reverse Current (Max)	10	A (VR=3V)
Output Collector Dark Current (Max)	100	nA (VCE=20V)
Output Collector Current (Typ.)	100 to 400	A (VCE=5V, IF=5mA)
Response Time - Rise (Max)	120	s (VCE=5V, Ic=100A, RL=1k)
Response Time - Fall (Max)	120	s (VCE=5V, Ic=100A, RL=1k)
Collector-Emitter Saturation Voltage (Max)	0.4	V (IF=10mA, Ic=40A)
Light Detector Type	Phototransistor
Light Detector Material	Silicon (Si)
Light Detector Max Sensitivity	920	nm
Light Detector Sensitivity	700 to 1200	nm
Light Detector Response Time	20	s
Light Emitter Type	Infrared light emitting diode (non-coherent)
Light Emitter Material	GaAs
Light Emitter Max Light Emitting Wavelength	940	nm
Light Emitter I/O Frequency	0.3	MHz
Packing Quantity (Reel)	2,500	pcs./Reel
Packing Quantity (Box)	12,500	pcs./box
Regular Packaged Mass	Approx. 700	g

2411261458_SHARP-GP1S396HCPSF_C919625.pdf

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